The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later.
Key features:
Chapter 1 Basic Memory Device Trends Toward the Vertical
Chapter 2 3D Memory Using Double-Gate, Folded, TFT, and Stacked Crystal Silicon
Chapter 3 Gate-All-Around (GAA) Nanowire for Vertical Memory
Chapter 4 Vertical NAND Flash
Chapter 5 3D Cross-Point Array Memory
Chapter 6 3D Stacking of RAM-Processor Chips Using TSV